|
|
EOT高速光電探測器,光電探測器
總部在美國的EOT(Electro-Optics Technology)公司成立于1987年,專(zhuān)注于生產(chǎn)和開(kāi)發(fā)高平均功率及高峰值功率法拉第旋轉器,隔離器以及高速光電探頭,為知名的光纖激光器廠(chǎng)商批量提供產(chǎn)品,并具有為特殊要求定制產(chǎn)品的開(kāi)發(fā)生產(chǎn)能力。法拉第光旋轉器/光隔離器廣泛應用于各種對于返回光極敏感的光學(xué)系統中,如多級激光放大器,光參量振蕩器,環(huán)形激光器,摻餌光纖放大器(用于隔離980nm泵浦光的反饋),種子注入型激光器,非線(xiàn)性光學(xué),光傳輸系統等。 產(chǎn)品包括:法拉第旋轉器和隔離器,高速光電探測器。
偏壓硅探測器
Model No. |
ET-2000 |
ET-2020 |
ET-2030 |
ET-2040 |
Detector Type |
PIN |
PIN |
PIN |
PIN |
Rise Time/Fall Time |
<350ps/<350ps |
<1.5ns/<1.5ns |
<300ps/<300ps |
<30ns/<30ns |
Responsivity at 830nm |
0.12mA/W |
0.6A/W |
0.47A/W |
0.6A/W |
Bandwidth |
>1.0GHz |
>200MHz |
>1.2GHz |
>25MHz |
Active Area Diameter |
110um x 55um |
2.55mm |
0.4mm |
4.57mm |
偏壓InGaAs探測器
Model No. |
ET-3000 |
ET-3010 |
ET-3020 |
ET-3040 |
Detector Type |
PIN |
PIN |
PIN |
PIN |
Rise Time/Fall Time |
<175ps/<175ps |
<175ps/<175ps |
<6ns/<250ns |
<1.25ns/<3.70ns |
Responsivity at 1300nm (A/W) |
0.9 |
0.85 |
0.9 |
0.9 |
Bandwidth |
>2GHz |
>2GHz |
>2.5MHz |
>50MHz |
Active Area Diameter |
100μm |
100μm |
3.0mm |
1.0mm |
<2GHz 放大光電探測器
Model No. |
ET-2030A |
ET-3000A |
Detector Material |
Silicon |
InGaAs |
Rise Time/Fall Time (ps) |
<500/<500 |
<400/<400 |
Conversion Gain (V/W) |
450 at 830nm |
900 at 1300nm |
Bandwidth |
30kHz-1.2GHz |
30kHz-1.5GHz |
Active Area Diameter (μm) |
400μm |
100μm |
TTL和模擬探測器
Model No. |
ET-2030TTL |
ET-3000TTL |
Detector Type |
PIN |
PIN |
Active Area Diameter (μm) |
400 |
100 |
Analog Output |
|
|
Rise Time/Fall Time (ps) |
<300/<300 |
<175/<175 |
Responsivity (A/W) |
0.47 at 830nm |
0.9 at 1300nm |
Bandwidth |
DC-1.2GHz |
DC-1.2GHz |
TTL Output |
|
|
Rise Time/Fall Time (ns) |
<8/<9 |
<8/<9 |
Bandwidth |
DC-60MHz |
DC-60MHz |
>12.5GHz GaAs 和 InGaAs探測器
Model No. |
ET-3500 |
ET-3500F |
ET-4000 |
ET-4000F |
Detector Type |
PIN |
PIN |
PIN |
PIN |
Rise Time/Fall Time (ps) |
<25/<25 |
<25/<25 |
<30/<30 |
<30/<30 |
Responsivity (A/W) |
>0.90 at 1300nm |
>0.65 at 1300nm |
0.53 at 830nm |
0.38 at 830nm |
Bandwidth |
>15GHz |
>15GHz |
>12.5GHz |
>12.5GHz |
Active Area Diameter (μm) |
32 |
32 |
60 |
60 |
>9GHz放大光電探測器
Model No. |
ET-3500A |
ET-3500AF |
ET-4000A |
ET-4000AF |
Detector Material |
InGaAs |
InGaAs |
GaAs |
GaAs |
Rise Time/Fall Time (ps) |
<40/<40 |
<40/<40 |
<40/<40 |
<40/<40 |
Conversion Gain (V/W) |
>900 at 1300nm |
>650 at 1300nm |
530 at 830nm |
380 at 830nm |
Bandwidth |
20kHz – 9GHz |
20kHz – 9GHz |
20kHz – 9GHz |
20kHz – 9GHz |
Active Area Diameter(μm) |
32 |
32 |
60 |
60 |
>12.5GHz 2um高速探測器
Model No. |
ET-5000 |
ET-5000F |
Detector Type |
PIN |
PIN |
Rise Time/Fall Time (ps) |
28 |
28 |
Responsivity (A/W at 2000nm) |
1.3 |
0.95 |
Bandwidth |
>12.5GHz |
>12.5GHz |
Active Area Diameter (μm) |
40 |
40 |
2um放大高速探測器
Model No. |
ET-5000A |
ET-5000AF |
Detector Type |
PIN |
PIN |
Rise Time/Fall Time (ps) |
40 |
40 |
Conversion Gain (V/W at 2000nm) |
1300 |
950 |
Bandwidth |
20kHz-9GHz |
20kHz-9GHz |
Active Area Diameter (μm) |
40 |
40 |
1.5-5um PbSe 大面積探測器
Model No. |
ET-6000 |
Detector Type |
Photoconductor |
Gain |
100x |
Rise Time/Fall Time (μs) |
23 |
Responsivity (High Impedance) |
>3.2x105V/W at 3.5μm |
Responsivity (50Ω Impedance) |
>1.6x105V/W at 3.5μm |
Bandwidth |
0.02kHz-15kHz |
Active Area Diameter (mm x mm) |
5 x 5 |
|